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Infineon Technologies (IPB123N10N3 G)
PartNo:
IPB123N10N3 G
Manufacturers:
Infineon Technologies
Qty:
1207
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Description:
MOSFET N-CH 100V 58A TO263-3
PDF:
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Product Information:
Packaging:
Tube
Series:
MDmesh? II Plus
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Rds On (Max) @ Id, Vgs:
88 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 250μA
Gate Charge (Qg) @ Vgs:
57nC @ 10V
Input Capacitance (Ciss) @ Vds:
2500pF @ 100V
Power - Max:
40W
Mounting Type:
Through Hole
Package / Case:
TO-220-3 Full Pack
Supplier Device Package:
TO-220FP
1N5822
Schottky Diodes & Rectifiers Vr/40V Io/3A BULK
X27.168
Accessories Automotive Gauge Stepper Motor - x27.168
FH12F-10S-0.5SH(55)
New and original,In stock
FH12F-14S-0.5SH(55)
New and original,In stock
FH12F-13S-0.5SH(55)
New and original,In stock
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